Comparison of hot-carrier effects in thin-film SOI and gate-all-around accumulation-mode p-MOSFETs

Abstract

The advantage of symmetrical gate (GAA) SOI structures over regular SOI in the case of AM p-MOSFETs was demonstrated in several respects: suppression of a latch phenomenon, suppression of excessively high hot-electron gate currents which have been experimentally and theoretically correlated with the latch, and better resistance to hot-electron degradation due to the absence of the latch and of the vulnerable buried oxide.<>