1200 V, 150 A insulated-gate thyristors

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515005

J. Ajit, D. Kinzer

引用次数: 7

Abstract

A insulated-gate thyristor (IGTH) design for achieving high controllable current capability is described. A square-cellular design with high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure is-used. The IGTH was fabricated using a double-diffused DMOS process and 1200 V devices with controllable currents in excess of 150 A were obtained.

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1200v, 150a绝缘栅晶闸管

介绍了一种实现高可控电流能力的绝缘栅晶闸管(IGTH)设计。采用具有高密度mos通道的方形单元设计来调制晶闸管结构的NPN晶体管基极区的电阻。采用双扩散DMOS工艺制备了IGTH，获得了电流大于150a的1200 V可控器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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