Effect of the Hydrophilic-Lipophilic Balance (HLB) of Surfactants Included in the Post-CMP Cleaning Chemicals on Porous SiOC Direct CMP

S. Kondo, M. Shiohara, K. Maruyama, K. Fukaya, K. Yamada, S. Ogawa, S. Saito
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引用次数: 5

Abstract

To reduce the effective k-value for the 45-nm node, direct CMP of a porous SiOC film without a protective cap layer is required. The hydrophilic-lipophilic balance (HLB) of a surfactant included in the post-CMP cleaning chemical was found to be a parameter that determines SiOC film damage and cleaning ability after direct CMP. To suppress the k-value increase and watermark generation, we need to reduce the chemical and mechanical stress of the barrier metal CMP slurry and brush scrub cleaning. Moreover, IPA (or glycolether) cleaning and H2/He remote plasma treatment are an effective restoring treatment after direct CMP.
后CMP清洗剂中表面活性剂亲水亲脂平衡(HLB)对多孔SiOC直接CMP的影响
为了降低45纳米节点的有效k值,需要对多孔SiOC膜进行直接CMP,而不需要保护帽层。发现CMP后清洗剂中含有的表面活性剂的亲水亲脂平衡(HLB)是决定直接CMP后SiOC膜损伤和清洗能力的参数。为了抑制k值的增加和水印的产生,我们需要降低屏障金属CMP浆料的化学和机械应力,并用刷子刷洗清洗。此外,IPA(或乙醇)清洗和H2/He远程血浆处理是直接CMP后有效的恢复治疗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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