Gate antenna structures for monitoring oxide quality and reliability

S. Nariani, C. Gabriel, D. Pramanik, K. Ng
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引用次数: 7

Abstract

Gate antenna structures have been developed to detect charge induced process damage to sub-micron gate oxide. For the first time, this damage is correlated with product failure due to gate oxide in accelerated life testing. These antenna structures are thus proven to be useful for wafer level gate oxide reliability screening.
用于监测氧化物质量和可靠性的栅极天线结构
栅极天线结构用于检测亚微米栅极氧化物的电荷诱导过程损伤。在加速寿命试验中,首次将这种损伤与栅氧化引起的产品失效联系起来。这些天线结构因此被证明是有用的晶圆级栅极氧化物可靠性筛选。
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