Development of wafer sawing capability on 2 mil saw street 4 mil thickness with TiNiAg back metal

Abstract

For existing industrial trend, increasing the Potential Die per Wafer (PDPW) through saw street reduction has become the common practice for wafer manufacturing cost reduction, which meant that sawing on wafer with saw street as narrow as 2 mil has become an important wafer sawing process in the market. The sawing process is becoming more complex with the requirement of multi layer wafer back metallization, such as TiNiAg. This paper reports the successful of development of wafer sawing capability on 2 mil saw street 4 mil thickness with TiNiAg Back Metal. The success of this sawing capability has created the opportunity not only for wafer cost reduction, but also provides a solid base and reference for the development of more challenging sawing process in future. This paper describes the development of the sawing capability.