Test structure to assess the useful extent of regular dummy devices around high-precision metal fringe capacitor arrays

H. Tuinhout, I. Brunets, A. Z. Duijnhoven
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Abstract

This paper discusses metal fringe capacitor matching test structures to characterize the impact of layer density disturbances at the edges of capacitor arrays. It is demonstrated that a seemingly minor pattern density disturbance can significantly affect the systematic mismatch in capacitor arrays up to well over 5 μm away from the array edges.
测试结构,以评估高精度金属条纹电容器阵列周围的规则虚拟装置的有用程度
本文讨论了金属条纹电容器匹配测试结构,以表征电容器阵列边缘层密度扰动的影响。结果表明,在距离阵列边缘超过5 μm的范围内,看似很小的图案密度扰动会显著影响电容阵列的系统失配。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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