A utility-based integrated process simulation system

E. W. Scheckler, A. Wong, R.H. Wang, G. Chin, J. Camagna, K. Toh, K. Tadros, R. Ferguson, A. Neureuther, R. Dutton
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引用次数: 13

Abstract

The effectiveness of a utility-based process simulation system is demonstrated by investigating several current VLSI technology problems with a variety of powerful simulators. Interactions of deposition, etching and spin-on steps in a planarization process are investigated with topography and creeping flow simulators. Topography and thermal processing simulators are combined to investigate a complete bipolar device process. Simulators for 2-D image calculation and scattering from topography are applied to problems in submicron lithography. The primary platform used for utility-based software integration is SIMPL-DIX which connects layout and process flow data, and an X-window graphical user-interface, into a system for generating device cross-sections. An experimental adaptation of SIMPL into the OCT/VEM/RPC CAD framework has also been developed that provides access to the VEM user-interface, the OCT database, a mask editor, and circuit CAD tools
基于实用程序的集成过程仿真系统
通过使用各种功能强大的仿真器对当前VLSI技术问题进行研究,证明了基于实用程序的过程仿真系统的有效性。利用地形学和蠕变流模拟器研究了平面化过程中沉积、蚀刻和自旋步骤的相互作用。形貌和热处理模拟器相结合,以研究一个完整的双极器件过程。将二维图像计算和地形散射模拟器应用于亚微米光刻问题。用于基于实用程序的软件集成的主要平台是simple - dix,它将布局和工艺流程数据以及x窗口图形用户界面连接到生成设备横截面的系统中。SIMPL在OCT/VEM/RPC CAD框架中的实验性改编也已经开发出来,它提供了对VEM用户界面、OCT数据库、掩模编辑器和电路CAD工具的访问
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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