E. W. Scheckler, A. Wong, R.H. Wang, G. Chin, J. Camagna, K. Toh, K. Tadros, R. Ferguson, A. Neureuther, R. Dutton
{"title":"A utility-based integrated process simulation system","authors":"E. W. Scheckler, A. Wong, R.H. Wang, G. Chin, J. Camagna, K. Toh, K. Tadros, R. Ferguson, A. Neureuther, R. Dutton","doi":"10.1109/VLSIT.1990.111026","DOIUrl":null,"url":null,"abstract":"The effectiveness of a utility-based process simulation system is demonstrated by investigating several current VLSI technology problems with a variety of powerful simulators. Interactions of deposition, etching and spin-on steps in a planarization process are investigated with topography and creeping flow simulators. Topography and thermal processing simulators are combined to investigate a complete bipolar device process. Simulators for 2-D image calculation and scattering from topography are applied to problems in submicron lithography. The primary platform used for utility-based software integration is SIMPL-DIX which connects layout and process flow data, and an X-window graphical user-interface, into a system for generating device cross-sections. An experimental adaptation of SIMPL into the OCT/VEM/RPC CAD framework has also been developed that provides access to the VEM user-interface, the OCT database, a mask editor, and circuit CAD tools","PeriodicalId":441541,"journal":{"name":"Digest of Technical Papers.1990 Symposium on VLSI Technology","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers.1990 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1990.111026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
The effectiveness of a utility-based process simulation system is demonstrated by investigating several current VLSI technology problems with a variety of powerful simulators. Interactions of deposition, etching and spin-on steps in a planarization process are investigated with topography and creeping flow simulators. Topography and thermal processing simulators are combined to investigate a complete bipolar device process. Simulators for 2-D image calculation and scattering from topography are applied to problems in submicron lithography. The primary platform used for utility-based software integration is SIMPL-DIX which connects layout and process flow data, and an X-window graphical user-interface, into a system for generating device cross-sections. An experimental adaptation of SIMPL into the OCT/VEM/RPC CAD framework has also been developed that provides access to the VEM user-interface, the OCT database, a mask editor, and circuit CAD tools