Y. Liu, T. Kamei, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, T. Matsukawa, K. Sakamoto, A. Ogura, M. Masahara
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引用次数: 0
Abstract
TR dependence of the electrical characteristics have systematically been investigated by fabricating PVD-TiN gate FinFETs. It was found that optimal TR is 915 °C for setting symmetrical Vth with a higher ION and the smallest σVth. It was also confirmed that carrier mobilities are independet of TR and comparable to those in the case of n+-poly-Si gate. The n+-poly-Si capping on PVD-TiN gate is very useful to set symmetrical Vth for undoped FinFETs without mobility degradation.
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