Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233625

Ken Uchida, H. Watanabe, Junji Koga, Atsuhiro Kinoshita, Shinichi Takagi

引用次数: 21

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, T/sub SOI/, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as T/sub SOI/ decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

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超薄体SOI mosfet中载流子输运机制的实验研究

对超薄体SOI cmosfet的电特性进行了深入的研究。结果表明，当SOI厚度T/sub SOI/在3.5 ~ 4.5 nm范围内时，电子迁移率随SOI厚度的减小而增大。另一方面，井眼迁移率随T/sub SOI/减小而单调减小。此外，研究表明，当SOI厚度小于4 nm时，轻微(甚至是原子级)的SOI厚度波动对超薄体cmosfet的阈值电压、栅极沟道电容和载流子迁移率有显著影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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