RF diamond MISFETs using surface accumulation layer

Abstract

Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 mum gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz