Random telegraph signal noise in CMOS active pixel sensors

Abstract

We discuss the source of random telegraph signal (RTS) behavior in photodiodes, metal-oxide-semiconductor (MOS) transistors and active pixel sensors (APS). First, a detailed review on the magnitude and the time constants of RTS noise observed in state-of-the art small-pitch imagers will be presented. Second, the impact of RTS noise on the quality of the images obtained from MOS imagers will be discussed, with a focus on the noise requirements for biomedical imaging applications. Finally, our experimental results will be discussed and some ideas on how to deal with RTS noise in silicon imagers will be described based on the RTS noise analyses.