A new test device for detecting very low leakage current using DRAM cell array

Abstract

A method for measuring very low leakage current is presented. The method, named the variable V/sub pc/ method, is capable of detecting leakage current lower than 10/sup -14/ A in the area of 8.7*9.4 mu m/sup 2/ using a dynamic RAM (DRAM) cell. This method is used to measure the leakage current caused by oxidation-induced stacking faults (OSFs) originating in a Si wafer. The leakage current of OSFs is evaluated quantitatively.<>