R. Stoner, G. Tas, C. Morath, H. Maris, Lee Chen, H. Chuang, Chi-Tung Huang, Y. Hwang
{"title":"Picosecond ultrasonic study of the electrical and mechanical properties of CoSi/sub 2/ formed under Ti and TiN cap layers","authors":"R. Stoner, G. Tas, C. Morath, H. Maris, Lee Chen, H. Chuang, Chi-Tung Huang, Y. Hwang","doi":"10.1109/IITC.2000.854318","DOIUrl":null,"url":null,"abstract":"We report noncontact measurements of CoSi/sub 2/ layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 /spl Aring/ Co capped with either 150 /spl Aring/ PVD TiN, or 100 /spl Aring/ PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report noncontact measurements of CoSi/sub 2/ layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 /spl Aring/ Co capped with either 150 /spl Aring/ PVD TiN, or 100 /spl Aring/ PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures.