Modeling and characterization of MOSFET width dependencies

Abstract

An improved model of MOSFET behavior over width is presented, together with a new, simple, and robust method to determine MOSFET width parameters from measurement data using nonlinear optimization. The authors' model properly accounts for the variation of effective channel width, series resistance, and threshold voltage with masked channel width and gate bias, and determines all MOSFET width parameters in a consistent manner. Details of test structures used for MOSFET width characterization are given.<>