Electrical characteristics evolution of the Deep Trench Termination diode based on a finite elements simulation approach

Abstract

The main contribution of this work consists in showing the possibility to use the Cyclotene 4026-46 BCB (BenzoCycloButen) resin in thick layer to realize Deep Trench Termination (DT2). The development of the DT2 in power devices strongly depends on its reliability. 2D finite elements simulations were used to determinate the electrical characteristics after mechanical stresses created in the structure. It appears that void created inside the structure does not affect the structure's characteristic; however it changes when a quantity of charge was added at interface Silicon/BCB.