Submicron three-terminal SiGe-based electromechanical ohmic relay

Abstract

This paper demonstrates functional NEM cantilever relays fabricated in a CMOS-compatible low-T (400°C) CVD SiGe process flow. Devices with a length in the micrometer range (<;3μm), a width in the range 0.2-1μm, a thickness and a gap of below 100nm were successfully fabricated and characterized. A high on/off current ratio (of better than 10⁸:1), a subthreshold swing (S) better than 150μV/decade and “essentially zero” off-state leakage current were experimentally observed. A life time of minimum 10³ switching cycles was demonstrated. A maximum current density of around 10μA/μm² without causing stiction due to Joule-heating was found.