Demonstration of a Novel Ferroelectric-Dielectric Negative Capacitance Tunnel FET

Abstract

In this paper, we propose a novel double gate Ferroelectric-Dielectric Negative Capacitance Tunnel FET (FDNC-TFET). A layer of ferroelectric material is kept near the source-channel junction to incorporate the impact of negative capacitance which arises due to the polarization of ferroelectric material. This amplifies the electric field and in turn enhances the tunneling probability. A well calibrated Sentaraus TCAD setup is used to simulate the proposed structure and the validity is proved by fitting the polarization-field curve with experimental data. We have compared the results of FDNC-TFET with Reference Tunnel FET (R-TFET) and found ~16× of improvement in the ON current. To justify the choice of ferroelectric-dielectric combination in the proposed structure, we have also compared the results of FDNC-TFET with the Full Ferroelectric Negative Capacitance Tunnel FET (FFNC-TFET), having a complete ferroelectric layer over the channel. The reported reduction in ambipolar current of our proposed work is ~25 times as compared to FFNC-TFET.