Local Strained Channel (LSC) nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility Enhancement, Size Dependence, and Hot Carrier Stress

Abstract

In this study, we propose a LSC technique that using SiN capping layer deposition with high mechanical stress on single poly-Si gate. In addition, nMOSFETs with thicker poly-Si gate (220 nm) can also increase tensile strain in the channel region compared to that of the thinner (150nm) poly-Si gate structure. Furthermore, size dependence of nMOSFETs with SiN capping layer is also studied and compared the thickness of SiN and poly-Si gate simultaneously. In the final, reliability of hot carrier injection is studied for all splits (Songlp, 1992). The trend of degradation among the splits of SiN capping layer is abnormal to the tensile stress on the channel