A single-poly BiCMOS technology with 30 GHz bipolar f/sub T/

C. Wang, J. Van Der Velden
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引用次数: 7

Abstract

We present process design and device performance of bipolar transistors embedded in a single-poly BiCMOS technology. The bipolar device possesses a CMOS-like morphology and is easily integrated into a CMOS-based process flow with two additional masks. The integrated process yields a structure with minimum topography. Process concerns associated with the conventional double-poly structure are therefore avoided. Shallow emitter and base junction depth are achieved through a conventional ion implantation approach with proper control of the thermal budget. Bipolar transistors featuring 31 GHz bipolar f/sub T/ and 4 V BV/sub ceo/ are achieved. The technology thus developed has the highest f/sub T/ in the category of single-polysilicon BiCMOS process ever reported.
30 GHz双极f/sub / T/单聚BiCMOS技术
介绍了单聚BiCMOS双极晶体管的工艺设计和器件性能。双极器件具有类似cmos的形态,并且易于集成到具有两个附加掩模的基于cmos的工艺流程中。集成过程产生具有最小地形的结构。因此避免了与传统双聚结构相关的工艺问题。通过传统的离子注入方法,在适当控制热收支的情况下,可以获得较浅的发射极和基极结深度。实现了31 GHz双极f/sub T/和4 V BV/sub ceo/的双极晶体管。由此开发的技术在单多晶硅BiCMOS工艺类别中具有最高的f/sub T/。
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