Circuit sensitivity analysis in terms of process parameters

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499371

M. van Dort, D. Klaassen

引用次数: 16

Abstract

A new methodology for sensitivity analysis at circuit level in terms of process parameters is presented. Response functions for long-channel MOSFETs are found from process and device simulations. Responses for a device with arbitrary dimensions are subsequently calculated using the MOS MODEL 9 scaling rules.

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根据工艺参数进行电路灵敏度分析

提出了一种基于工艺参数的电路级灵敏度分析新方法。从工艺和器件仿真中得到了长沟道mosfet的响应函数。随后使用MOS MODEL 9缩放规则计算具有任意尺寸的器件的响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of International Electron Devices Meeting

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