A Quantitative Analysis of Neutron-Induced Multi-Cell Upset in Deep Submicron SRAMs and of the Impact Due to Anomalous Noise

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369566

H. Kameyama, Y. Yahagi, E. Ibe

{"title":"A Quantitative Analysis of Neutron-Induced Multi-Cell Upset in Deep Submicron SRAMs and of the Impact Due to Anomalous Noise","authors":"H. Kameyama, Y. Yahagi, E. Ibe","doi":"10.1109/RELPHY.2007.369566","DOIUrl":null,"url":null,"abstract":"In this work, the multiplicity of neutron-induced upsets of SRAMs with 130/180 nm technologies is analyzed by using several neutron beams and RTSER. The neutron peak-energy dependence of the ratio for MCU to the total number of upsets can be described by Weibull-type function with a threshold energy for the MCU. As a result of the 130nm SRAM test, the probability function of MCU can be approximated as a superposition of an exponential and a Lorentzian. We also demonstrate that the MCU/SEU ratio obtained by real-time measurements (RTSER) cross over the ASER data at around 20-40MeV. This indicates that the MCU obtained from ASER test using high neutron peak energy more than 50MeV tends to lead to an excessive estimation of the MCU/SEU ratio compared to the RTSER measurements. In addition, the effect due to anomalous noise has been studied and the phenomenon could be suggested as some special signs related to a geophysical mechanism and is expected to be investigated further with more analysis.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

Abstract

In this work, the multiplicity of neutron-induced upsets of SRAMs with 130/180 nm technologies is analyzed by using several neutron beams and RTSER. The neutron peak-energy dependence of the ratio for MCU to the total number of upsets can be described by Weibull-type function with a threshold energy for the MCU. As a result of the 130nm SRAM test, the probability function of MCU can be approximated as a superposition of an exponential and a Lorentzian. We also demonstrate that the MCU/SEU ratio obtained by real-time measurements (RTSER) cross over the ASER data at around 20-40MeV. This indicates that the MCU obtained from ASER test using high neutron peak energy more than 50MeV tends to lead to an excessive estimation of the MCU/SEU ratio compared to the RTSER measurements. In addition, the effect due to anomalous noise has been studied and the phenomenon could be suggested as some special signs related to a geophysical mechanism and is expected to be investigated further with more analysis.

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深亚微米sram中中子诱导多细胞扰动及异常噪声影响的定量分析

本文利用多束中子束和RTSER分析了130/180 nm工艺的sram中子诱导扰动的多重性。MCU的中子峰值能量与总扰动数的关系可以用weibull型函数来描述，该函数具有MCU的阈值能量。通过对130nm SRAM的测试，可以将MCU的概率函数近似为指数函数和洛伦兹函数的叠加。我们还证明了通过实时测量(RTSER)获得的MCU/SEU比率在20-40MeV左右跨越ASER数据。这表明，与RTSER测量相比，使用超过50MeV的高中子峰值能量从ASER测试中获得的MCU往往会导致对MCU/SEU比的过度估计。此外，对异常噪声的影响进行了研究，认为这种现象可能是与地球物理机制有关的一些特殊迹象，值得进一步研究和分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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