Reliability considerations of sintered silver paste on clip semiconductor packages

Richard Q. Clemente, Erik Nino Tolentino, M. Azman
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引用次数: 4

Abstract

Sintered Ag has gained attention as a replacement for high lead applications due to its high thermal, electrical and reliability performance. Today, the temperature requirements for certain business units require higher levels of capability. Coupled with the pressures of converting to lead free, a feasible solution needs to be reached soon. This led to the formation of the DA5 (die attach 5) consortium in 2010. This was composed of semiconductor companies NXP, STMicroelectronics, Freescale, Infineon and Bosch. The main purpose was to look for alternative materials that can support application requirements exceeding the capabilities of solders. Although lab scale tests shows that sinter Ag can be an alternative, limited data is available on sintered Ag performance integrated with high power device applications. Samples were assembled using sinter Ag die attach material on using a Zener diode housed on a clip package. The experimental method was divided in two phases: material characterization at varying amounts of N2 and reliability phase which subjects these units to Temperature Cycle, Highly Accelerated Stress Test (HAST), and Autoclave. All samples underwent normal assembly except for the sintering process which is necessary for silver die attach to achieve solid state diffusion. Microstructure analysis of sinter Ag die attach results into denser formation of sinter Ag paste when subjected to low N2 concentration. Die shear results were highest at low N2 concentration due to increased grain boundary formation over the sinter Ag matrix. However, low N2 concentration leads to copper oxidation which is detrimental on surface adhesion between of the lead frame and mold compound. This was observed during the characterization step wherein oxides were formed on the lead frame surface. Subjecting the copper lead frame with gross oxide formation led to failures at autoclave test. Scanning acoustic tomography reveals gross separation of lead frame to mold compound interface. Also, we have determined that silver migration is a key failure mechanism for sinter Ag die attach when subjected at high N2 concentration. The reliability results for mid and low N2 sintering atmosphere show resistive effect on Ag migration. The overall outlook for Sinter Ag based on the current experimentation suggests that sinter Ag could be a viable solution provided that these key failure mechanisms are addressed and fully understood.
夹式半导体封装上烧结银浆料的可靠性考虑
烧结银因其高热学、电气性能和可靠性而成为高铅应用的替代品。如今,某些业务单元的温度需求需要更高级别的能力。再加上转换为无铅的压力,需要尽快达成可行的解决方案。这导致了2010年DA5 (die attach 5)联盟的成立。这是由半导体公司恩智浦、意法半导体、飞思卡尔、英飞凌和博世组成。主要目的是寻找能够支持超出焊料能力的应用需求的替代材料。尽管实验室规模的测试表明,烧结银可以是一种替代方案,但关于烧结银性能与高功率器件应用集成的数据有限。样品的组装使用烧结银模附加材料,使用齐纳二极管安置在夹子封装上。实验方法分为两个阶段:不同氮气量下的材料表征和可靠性阶段,其中对这些单元进行温度循环、高加速应力测试(HAST)和高压灭菌。所有样品都进行了正常的组装,除了烧结过程,这是银模附着以实现固态扩散所必需的。对烧结银模附着物的微观结构分析表明,在低N2浓度下,烧结银膏体的形成更加致密。在低氮浓度下,由于烧结银基体上晶界的形成增加,模具剪切结果最高。然而,低N2浓度会导致铜氧化,不利于引线框架与模具化合物的表面粘附。这是在表征步骤中观察到的,其中氧化物在引线框架表面形成。在高压灭菌器试验中,铜引线框架与氧化层形成导致失败。扫描声层析成像显示引线框架与模具复合界面大体分离。此外,我们还确定了银迁移是烧结银模在高浓度N2下附着的关键失效机制。在中、低N2烧结气氛下的可靠性结果表明,Ag的迁移具有阻力效应。基于目前的实验,烧结银的整体前景表明,如果这些关键的失效机制得到解决和充分理解,烧结银可能是一种可行的解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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