Wafer Level Stress: Enabling Zero Defect Quality for Automotive Microcontrollers without Package Burn-In

Chen He, Y. Yu
{"title":"Wafer Level Stress: Enabling Zero Defect Quality for Automotive Microcontrollers without Package Burn-In","authors":"Chen He, Y. Yu","doi":"10.1109/ITC44778.2020.9325213","DOIUrl":null,"url":null,"abstract":"Automotive microcontrollers demand extremely high reliability requirements. Burn-In (BI) stress to screen out early life failures caused by latent defects has become a quality requirement for automotive semiconductors. However, as feature size continues to scale down, performing BI stress on packaged parts has started to run into challenges including increased risks of thermal runaway and overstress, together with continuously increased cost and cycle time. In this paper, we present a new wafer level stress methodology consisting of enhanced High Voltage Stress Test (eHVST), Wafer Level Burn-In (WLBI), and enhanced Advanced Outlier Limit (eAOL) screens, which can achieve Zero Defect quality for automotive microcontrollers without package BI. It has been successfully implemented in production for NXP S32K1 automotive microcontrollers with benchmark DPPB (Defective Parts Per Billion) level of quality from over 20 million parts shipped in last several years.","PeriodicalId":251504,"journal":{"name":"2020 IEEE International Test Conference (ITC)","volume":"88 19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Test Conference (ITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITC44778.2020.9325213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

Automotive microcontrollers demand extremely high reliability requirements. Burn-In (BI) stress to screen out early life failures caused by latent defects has become a quality requirement for automotive semiconductors. However, as feature size continues to scale down, performing BI stress on packaged parts has started to run into challenges including increased risks of thermal runaway and overstress, together with continuously increased cost and cycle time. In this paper, we present a new wafer level stress methodology consisting of enhanced High Voltage Stress Test (eHVST), Wafer Level Burn-In (WLBI), and enhanced Advanced Outlier Limit (eAOL) screens, which can achieve Zero Defect quality for automotive microcontrollers without package BI. It has been successfully implemented in production for NXP S32K1 automotive microcontrollers with benchmark DPPB (Defective Parts Per Billion) level of quality from over 20 million parts shipped in last several years.
晶圆级应力:实现无封装老化的汽车微控制器零缺陷质量
汽车微控制器对可靠性的要求非常高。利用老化(BI)应力来筛选潜在缺陷引起的早期寿命失效已成为汽车半导体的质量要求。然而,随着功能尺寸的不断缩小,在封装部件上执行BI压力已经开始遇到挑战,包括热失控和过度压力的风险增加,以及不断增加的成本和周期时间。在本文中,我们提出了一种新的晶圆级应力方法,该方法由增强型高压应力测试(eHVST),晶圆级老化(WLBI)和增强型高级异常限(eAOL)屏幕组成,可以实现无封装BI的汽车微控制器零缺陷质量。它已成功用于生产NXP S32K1汽车微控制器,其基准DPPB(每十亿次品)质量水平来自过去几年出货的2000多万个零件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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