Properties of very thin adenine layer with high inhibition for 32nm node Cu/Low-K interconnection

Abstract

An effective inhibition with very thin layer is required for Cu/Low-K interconnection of next generation devices. We have achieved an effective suppression of Cu oxidation using adenine as an environmentally friendly material. By using electrochemical measurements, we find that the adenine layer can inhibit Cu oxidation by forming the very thin layer compared with Benzotriazol (BTA) as a conventional Cu inhibitor.