Integration of a low-k organic polymer material (k=2.3) for reducing both resistance and capacitance

M. Hirai, Y. Akiyama, K. Koga, H. Kawakami, K. Nakatani, M. Tada
{"title":"Integration of a low-k organic polymer material (k=2.3) for reducing both resistance and capacitance","authors":"M. Hirai, Y. Akiyama, K. Koga, H. Kawakami, K. Nakatani, M. Tada","doi":"10.1109/IITC.2012.6251579","DOIUrl":null,"url":null,"abstract":"We demonstrated an integration of a non-progen organic polymer (k=2.3) developed by Sumitomo Bakelite Co. Ltd. H2/He plasma damage recovery process which was developed for organic materials achieved 5% capacitance reduction with keeping enough TDDB reliability. The mechanism was presumed by chemical analysis. Moreover, the TDDB lifetime was not degraded even without a barrier metal, indicating this polymer could enable resistance reduction for its Cu diffusion barrier performance. This polymer would reduce both resistance and capacitance.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We demonstrated an integration of a non-progen organic polymer (k=2.3) developed by Sumitomo Bakelite Co. Ltd. H2/He plasma damage recovery process which was developed for organic materials achieved 5% capacitance reduction with keeping enough TDDB reliability. The mechanism was presumed by chemical analysis. Moreover, the TDDB lifetime was not degraded even without a barrier metal, indicating this polymer could enable resistance reduction for its Cu diffusion barrier performance. This polymer would reduce both resistance and capacitance.
集成低k有机聚合物材料(k=2.3),降低电阻和电容
我们展示了由住友胶木株式会社开发的非原生有机聚合物(k=2.3)的集成。针对有机材料开发的H2/He等离子体损伤恢复工艺在保持足够的TDDB可靠性的情况下,实现了5%的电容降低。机理是通过化学分析推测出来的。此外,即使没有屏障金属,TDDB的寿命也不会降低,这表明该聚合物可以降低其Cu扩散屏障性能的阻力。这种聚合物可以降低电阻和电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信