0.1 mu m p-channel MOSFETs with 51 GHz f/sub T/

Abstract

We report a record 51 GHz f/sub T/ for 0.1 mu m gate length pMOSFETs. Maximum transconductance observed was 330 mS/mm, subthreshold slope was 87 mV/decade. We have also obtained gate sheet resistance of 4-5 Omega / Square Operator at 0.1 mu m gate length using platinum silicide. To reduce the overlap capacitance due to a relatively deep junction, a two-step sidewall process was implemented.<>