100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Abstract

Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented