Investigations of the effects of blade type, dicing tape, blade preparation and process parameters on 55nm node low-k wafer

K. Shi, K. Yow, Rachel Khoo
{"title":"Investigations of the effects of blade type, dicing tape, blade preparation and process parameters on 55nm node low-k wafer","authors":"K. Shi, K. Yow, Rachel Khoo","doi":"10.1109/IEMT.2010.5746663","DOIUrl":null,"url":null,"abstract":"This paper presents an investigation of the effects of blade type, dicing tape, blade preparation and the key process parameters optimization on improving topside ILD peeling (thicker scribe structures) and chipping for 55nm low-k wafer. An appropriate dicing blade selection, blade preparation / conditioning methodology and dicing tape selection plays an important role in developing a robust saw process. As such, experimental studies were conducted under varying Z1 spindle rotation, Z1 cut depth into Si as well as the blade type property variation as the input factors, in order to improve the ILD peeling and die chipping. The settings of machining parameters and blade types were determined by using the design of experiment (DOE) techniques and the critical process parameters and materials were analyzed statistically by using the analysis of variance (ANOVA). Dicing tape property variations (PO-base or PVC-base) as well as the blade preparation methodology posed some influences on the overall dicing quality, such as die backside chipping, die removal performance, ILD peeling and die topside chipping. SEM imaging and optical visual inspection were conducted to validate the impacts of the ILD peeling / chipping on post-processed low-k wafers. A thorough quantification and categorization of ILD peeling and chipping on heavy metallization at the saw scribe structures were described. As part of the recommendation for future works, a different approach in dicing technology, namely laser grooving was proposed to eliminate ILD peeling and chipping. In conclusion, the optimized dicing recipe for 55nm node low-k wafer suggested by the DOE model are: (1) a thinner PO-base dicing tape, (2) a dicing blade with higher diamond concentration and finer grit size, (3) blade preparation / conditioning done with SiC board and (4) processing at lower spindle rotation and deeper cut depth are much preferred. The overall dicing responses and cutting quality has improved and is better compared to current production recipe.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2010.5746663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents an investigation of the effects of blade type, dicing tape, blade preparation and the key process parameters optimization on improving topside ILD peeling (thicker scribe structures) and chipping for 55nm low-k wafer. An appropriate dicing blade selection, blade preparation / conditioning methodology and dicing tape selection plays an important role in developing a robust saw process. As such, experimental studies were conducted under varying Z1 spindle rotation, Z1 cut depth into Si as well as the blade type property variation as the input factors, in order to improve the ILD peeling and die chipping. The settings of machining parameters and blade types were determined by using the design of experiment (DOE) techniques and the critical process parameters and materials were analyzed statistically by using the analysis of variance (ANOVA). Dicing tape property variations (PO-base or PVC-base) as well as the blade preparation methodology posed some influences on the overall dicing quality, such as die backside chipping, die removal performance, ILD peeling and die topside chipping. SEM imaging and optical visual inspection were conducted to validate the impacts of the ILD peeling / chipping on post-processed low-k wafers. A thorough quantification and categorization of ILD peeling and chipping on heavy metallization at the saw scribe structures were described. As part of the recommendation for future works, a different approach in dicing technology, namely laser grooving was proposed to eliminate ILD peeling and chipping. In conclusion, the optimized dicing recipe for 55nm node low-k wafer suggested by the DOE model are: (1) a thinner PO-base dicing tape, (2) a dicing blade with higher diamond concentration and finer grit size, (3) blade preparation / conditioning done with SiC board and (4) processing at lower spindle rotation and deeper cut depth are much preferred. The overall dicing responses and cutting quality has improved and is better compared to current production recipe.
研究了刀片类型、切片胶带、刀片制备及工艺参数对55nm节点低k晶圆的影响
本文研究了刀片类型、切割带、刀片制备和关键工艺参数优化对55nm低k硅片上甲板ILD剥离(更厚的刻痕结构)和切屑性能的影响。适当的切割刀片选择,刀片准备/调节方法和切割胶带选择在开发稳健的锯切过程中起着重要作用。为此,为了改善ILD剥离和模具切屑,以不同Z1主轴转速、Z1切入Si深度以及刀片类型性能变化为输入因素,进行了实验研究。采用试验设计(DOE)技术确定加工参数和叶片类型的设置,采用方差分析(ANOVA)对关键工艺参数和材料进行统计分析。切片胶带性能的变化(po基或pvc基)以及刀片制备方法对整体切片质量产生了一些影响,如模具背面脱落、模具去除性能、ILD脱落和模具顶部脱落。通过SEM成像和光学视觉检测来验证ILD剥离/削片对后处理低k晶圆的影响。描述了在锯划线结构上重金属化的ILD剥落和切屑的彻底量化和分类。作为对未来工作的一部分建议,提出了一种不同的切割技术,即激光开槽,以消除ILD剥落和切屑。综上所述,DOE模型建议的55nm节点低k晶圆的最佳切割配方为:(1)更薄的po基切割带;(2)更高金刚石浓度和更细粒度的切割刀片;(3)用SiC板制备/调整刀片;(4)更低的主轴转速和更深的切割深度加工。与目前的生产配方相比,整体的切丁反应和切割质量得到了改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信