Transport of charge and electronic structure of traps in SONOS structures

Abstract

In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si/sub 3/N/sub 4/ and 1.5 eV for hole injecting from Au/Si/sub 3/N/sub 4/ interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si/sub 3/N/sub 4/ can traps both electrons and holes.