3-dimensional micromachining of PTFE using synchrotron radiation direct photo-etching

N. Nishi, T. Katoh, H. Ueno, S. Konishi, S. Sugiyama
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引用次数: 9

Abstract

In order to fabricate highly functional microdevices for MEMS, three-dimensional (3D) micromachining that can form certain round or curved structures is required. Recently, a high aspect ratio micromachining process using synchrotron radiation (SR) direct photo-etching of polymers without any process gases, the so called TIEGA (Teflon included etching galvanicforming), has been developed. The etching rate is of the order of 10-100 /spl mu/m/min. Therefore, the processing for a 1000 /spl mu/m-depth microstructure takes about 10 minutes, much shorter than that required for the deep X-ray lithography (LIGA) process. Moreover, it is free from problems of sticking due to the surface tension of the developer, the rinsing process etc., as SR etching is a completely dry process. Due to the high processing speed and smoothness of the etched surfaces, SR etching might have a potential for 3D micromachining by combining a scanning stage with a high degree of freedom. It is expected that microstructures formed by SR etching will be applied not only to highly functional mircodevices, but also in the biomedical field, due to the material characters of PTFE. In this paper, we propose SR etching as a new approach to form 3D microstructures of PTFE and describe results of preliminary experiments for 3D micromachining.
同步辐射直接光蚀刻PTFE的三维微加工
为了制造用于MEMS的高功能微器件,需要能够形成某些圆形或弯曲结构的三维(3D)微加工。近年来,一种利用同步辐射(SR)直接光蚀刻聚合物的高纵横比微加工工艺,即所谓的TIEGA(含聚四氟乙烯蚀刻电铸)已被开发出来。刻蚀速率约为10-100 μ /m/min。因此,1000 /spl mu/m-depth的微结构处理大约需要10分钟,比深x射线光刻(LIGA)工艺所需的时间短得多。此外,由于SR蚀刻是一个完全干燥的过程,因此它不存在由于显影剂的表面张力,冲洗过程等而引起的粘着问题。由于刻蚀表面的高加工速度和光滑度,将扫描阶段与高自由度相结合,SR刻蚀可能具有3D微加工的潜力。由于PTFE的材料特性,期望通过SR刻蚀形成的微结构不仅可以应用于高功能的微器件,还可以应用于生物医学领域。本文提出了一种形成PTFE三维微观结构的新方法,并描述了三维微加工的初步实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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