Single-Event Effects in Power MOSFETs with Mono-energetic Neutron Beams

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI:10.1109/REDW51883.2020.9325853

J. George, Joshua M. Pritts, T. Fairbanks, S. Wender, E. Auden, H. Quinn

引用次数: 0

Abstract

Neutron-induced single event burnout was measured in power MOSFET devices using mono-energetic neutron beams at the Triangle Universities Nuclear Laboratory.

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单能中子束功率mosfet的单事件效应

在三角大学核实验室，利用单能中子束在功率MOSFET器件中测量了中子诱导的单事件烧坏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)

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