H. Kudo, H. Ochimizu, A. Tsukune, S. Okano, K. Naitou, M. Sakamoto, S. Takesako, T. Shirasu, A. Asneil, N. Idani, K. Sugimoto, S. Ozaki, Y. Nakata, T. Owada, H. Watatani, N. Ohara, N. Ohtsuka, M. Sunayama, H. Sakai, T. Tabira, A. Matsuura, Y. Iba, Y. Mizushima, H. Matsuyama, Y. Suzuki, N. Shimizu, K. Yanai, M. Nakaishi, T. Futatsugi, I. Hanyu, T. Nakamura, T. Sugii
{"title":"Strategies of RC Delay Reduction in 45 nm BEOL Technology","authors":"H. Kudo, H. Ochimizu, A. Tsukune, S. Okano, K. Naitou, M. Sakamoto, S. Takesako, T. Shirasu, A. Asneil, N. Idani, K. Sugimoto, S. Ozaki, Y. Nakata, T. Owada, H. Watatani, N. Ohara, N. Ohtsuka, M. Sunayama, H. Sakai, T. Tabira, A. Matsuura, Y. Iba, Y. Mizushima, H. Matsuyama, Y. Suzuki, N. Shimizu, K. Yanai, M. Nakaishi, T. Futatsugi, I. Hanyu, T. Nakamura, T. Sugii","doi":"10.1109/IITC.2007.382383","DOIUrl":null,"url":null,"abstract":"According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier metal lowered the RC delay to 86 % compared to that listed in the ITRS 2006 update.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Interconnect Technology Conferencee","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2007.382383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid and tri-level dielectrics. Combination of the homogeneous interlayer dielectric and ultra-thinned barrier metal lowered the RC delay to 86 % compared to that listed in the ITRS 2006 update.
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