Low voltage MOSFET optimized for low VDS transient voltages

Abstract

A 30V power MOSFET technology, employing a low voltage superjunction approach, has been optimized for operation as a low-side switch in a DC-DC buck converter. In particular, this technology has been designed with an emphasis on minimizing the voltage overshoots that occur in high efficiency DC-DC converters by modification of the MOSFET's body diode and output capacitance, COSS. This has resulted in a significant reduction in VDS overshoot of ≈50%.