Characterization of copper CVD process by a process monitor

Abstract

The mass spectrometric technique for monitoring copper chemical vapor deposition process using Cu(hfac)(tmvs) has been investigated. Characterization of the process chemistry identified the main ionic species that could be used to monitor and study the process. Reactant flow rate and the mass spectrometric signal of TMVS was found to have linear relationship. The process monitor response time for the reactants and the product species was of the order of seconds. The reproducibility of the Cu CVD process was studied by using a process-monitoring recipe. This process monitoring technique has been used for tool and process optimization.