{"title":"Degradation- and Failure Mode Analysis of III-V Nitride Devices","authors":"J. Tharian","doi":"10.1109/IPFA.2007.4378102","DOIUrl":null,"url":null,"abstract":"In this work, different failure modes and degradation mechanisms of AlInGaN LEDs were studied under different stress conditions. Another aim of this work was to develop a classification criteria of the LEDs based on initial RBL characteristics and enable the manufacturers ensure better reliability standards.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this work, different failure modes and degradation mechanisms of AlInGaN LEDs were studied under different stress conditions. Another aim of this work was to develop a classification criteria of the LEDs based on initial RBL characteristics and enable the manufacturers ensure better reliability standards.