Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573404

L. Goux, A. Belmonte, U. Celano, J. Woo, S. Folkersma, C. Y. Chen, A. Redolfi, A. Fantini, R. Degraeve, S. Clima, W. Vandervorst, M. Jurczak

引用次数: 10

Abstract

We optimize a novel W\WO3\Al2O3\Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.

查看原文本刊更多论文

在新型W\WO3\Al2O3\Cu CBRAM中，通过局部化学势调谐和控制沙漏灯丝形状，实现了保留、干扰和可变性的改善

我们优化了一种新型W\WO3\Al2O3\Cu CBRAM电池，可以很好地控制沙漏(HG)形导电灯丝(CF)，改善开关可变性，低电流下的干扰和保持。我们首次证明了接近HG收缩的Cu化学势对状态保留的临界影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2016 IEEE Symposium on VLSI Technology

自引率

0.00%

发文量