{"title":"2003 8th International Symposium on Plasma- and Process-Induced Damage. (Cat. No.03TH8669)","authors":"","doi":"10.1109/PPID.2003.1199715","DOIUrl":null,"url":null,"abstract":"The following topics are dealt with: process induced damage in CMOS; plasma etching processes; gate charging effect; plasma induced damage; scaling effects; ultrathin dielectrics; plasma-induced charging; reliability issues; ion implantation technology; electron shading damage; gate oxide quality; damage monitoring; IC interconnection designs; plasma equipment trends; and CMOS downscaling.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1199715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The following topics are dealt with: process induced damage in CMOS; plasma etching processes; gate charging effect; plasma induced damage; scaling effects; ultrathin dielectrics; plasma-induced charging; reliability issues; ion implantation technology; electron shading damage; gate oxide quality; damage monitoring; IC interconnection designs; plasma equipment trends; and CMOS downscaling.