Significance of including substrate capacitance in the full chip circuit model of ICs under CDM stress

M. Sowariraj, P. de Jong, S.M. Cora, T. Smedes, A. Mouthaan, F. Kuper
{"title":"Significance of including substrate capacitance in the full chip circuit model of ICs under CDM stress","authors":"M. Sowariraj, P. de Jong, S.M. Cora, T. Smedes, A. Mouthaan, F. Kuper","doi":"10.1109/RELPHY.2005.1493166","DOIUrl":null,"url":null,"abstract":"In the CDM type of ESD, the IC is both the source and part of the discharge current path. To study the CDM performance of an IC, a full-chip circuit model that includes the various static charge sources and its discharge path through the circuit as it occurs in reality is needed. Static charge sources in a CDM event are the various package capacitors. CDM circuit models presented before include only the capacitors formed by the IC circuit design on the package and not the capacitance of the die attachment plate on which the die is placed. The paper emphasizes the need to include this capacitance and presents a simple method of including this capacitor and its discharge path through the circuit during CDM stress.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2005.1493166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

In the CDM type of ESD, the IC is both the source and part of the discharge current path. To study the CDM performance of an IC, a full-chip circuit model that includes the various static charge sources and its discharge path through the circuit as it occurs in reality is needed. Static charge sources in a CDM event are the various package capacitors. CDM circuit models presented before include only the capacitors formed by the IC circuit design on the package and not the capacitance of the die attachment plate on which the die is placed. The paper emphasizes the need to include this capacitance and presents a simple method of including this capacitor and its discharge path through the circuit during CDM stress.
CDM应力下集成电路全片电路模型中包含衬底电容的意义
在CDM型ESD中,集成电路既是放电电流路径的源又是放电电流路径的一部分。为了研究集成电路的CDM性能,需要一个包含各种静电荷源及其在电路中实际发生的放电路径的全芯片电路模型。CDM事件中的静电源是各种封装电容器。之前介绍的CDM电路模型只包括封装上的IC电路设计形成的电容,而不包括放置模具的贴装板的电容。本文强调了包括该电容的必要性,并提出了一种在CDM应力下包括该电容及其通过电路的放电路径的简单方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信