Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing

Abstract

The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<>