A device array for efficient bias-temperature instability measurements

Abstract

A device array suitable for efficiently collecting statistical information on bias-temperature instability (BTI) parameters of a large number of transistors is presented. The proposed array structure substantially shortens measurement time of threshold voltage shifts under BTI conditions by parallelizing stress periods of multiple devices while maintaining 0.2mV precision. An implementation of BTI array consisting of 128 devices successfully validates stress-pipelining concept. Log-normal distributions of time exponents are experimentally observed.