Excellent resistive switching memory: Influence of GeOx in WOx mixture

Abstract

Influence of GeO_x layer on resistive switching memory performance in a simple and CMOS compatible W/WO_x/GeO_x:WO_x mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO_x/W structure. An excellent read endurance and program/erase cycles of >;10⁶ at large V_read of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.