Time domain harmonic load-pull of an AlGaN/GaN HEMT

Abstract

This paper describes the time domain measurements up to 2.5 Watts of an AlGaN/GaN HEMT performed on an innovative measurement setup dedicated to high power characterizations. The key characteristics of our setup are presented, allowing us to reach time domain waveforms for high power transistors under source-pull and harmonic load-pull conditions. The capability of our setup to acquire time domain waveforms versus the fundamental and first harmonic matching conditions is shown.