Enabling pre-assembly process of 3D wafers with high topography at the backside

A. Podpod, C. Demeurisse, F. Inoue, F. Duval, J. Visker, J. de Vos, K. Rebibis, R. A. Miller, G. Beyer, E. Beyne
{"title":"Enabling pre-assembly process of 3D wafers with high topography at the backside","authors":"A. Podpod, C. Demeurisse, F. Inoue, F. Duval, J. Visker, J. de Vos, K. Rebibis, R. A. Miller, G. Beyer, E. Beyne","doi":"10.1109/EPTC.2015.7412326","DOIUrl":null,"url":null,"abstract":"In a specific 3D die to die stacking scenario using a Si interposer technology for high band width interconnect applications1, wherein dies including the Silicon interposer were stacked first before placing it onto the substrate, posts a challenge on pre-assembly processes. This paper presents what and which areas the challenges are and reports on the solution found that enabled the pre-assembly processes for 3D wafers with high topography at the backside (Si interposer): a UV dicing tape that can handle the complexities at hand.","PeriodicalId":418705,"journal":{"name":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2015.7412326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In a specific 3D die to die stacking scenario using a Si interposer technology for high band width interconnect applications1, wherein dies including the Silicon interposer were stacked first before placing it onto the substrate, posts a challenge on pre-assembly processes. This paper presents what and which areas the challenges are and reports on the solution found that enabled the pre-assembly processes for 3D wafers with high topography at the backside (Si interposer): a UV dicing tape that can handle the complexities at hand.
实现背面高形貌3D晶圆的预组装工艺
在一个特定的3D芯片堆叠场景中,使用硅中间层技术进行高带宽互连应用1,其中包括硅中间层在内的芯片在将其放置到基板上之前首先堆叠,这对预组装工艺提出了挑战。本文介绍了挑战所在的领域,并报告了解决方案,该解决方案使具有高地形的3D晶圆(Si中间层)的预组装过程成为可能:UV切割带可以处理手头的复杂性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信