A. Paranjpe, R. Bubber, L. Velo, G. Shang, S. Gopinath, J. Dalton, M. Moslehi
{"title":"CVD TaN barrier for copper metallization and DRAM bottom electrode","authors":"A. Paranjpe, R. Bubber, L. Velo, G. Shang, S. Gopinath, J. Dalton, M. Moslehi","doi":"10.1109/IITC.1999.787096","DOIUrl":null,"url":null,"abstract":"The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 /spl Aring/ compared to >250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.","PeriodicalId":319568,"journal":{"name":"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.1999.787096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 /spl Aring/ compared to >250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.