CVD TaN barrier for copper metallization and DRAM bottom electrode

A. Paranjpe, R. Bubber, L. Velo, G. Shang, S. Gopinath, J. Dalton, M. Moslehi
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引用次数: 6

Abstract

The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 /spl Aring/ compared to >250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.
铜金属化用CVD TaN阻挡层及DRAM底电极
PVD势垒的可扩展性预计将成为0.13 /spl μ l /m铜金属化的限制因素,而MOCVD势垒由于其优越的一致性可能是必不可少的。利用液态有机金属前驱体,在高宽高比(AR>5)沟槽/通孔中沉积了一种纳米晶共形(>85%)MOCVD TaN层,其阻挡性能相当于C - pvd TaN。这使得i-PVD TaN的阻挡层厚度可以缩放到250 /spl /。电阻率达到/spl sim/1000 /spl mu//spl Omega/-cm,可通过阻隔工程进一步降低。MOCVD TaN是将铜金属化扩展到低于0.13 /spl mu/m技术节点的关键推动者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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