{"title":"A Simple Flip-Around Switch with Reduced Charge Injection for High Precision Single-Ended Switched-Capacitor Circuits","authors":"Ravikumar Adusumalli, Rahul Thottathil, Krishna Kanth Gowri Avalur","doi":"10.1109/MOS-AK.2019.8902421","DOIUrl":null,"url":null,"abstract":"This paper presents a architecture to reduce charge injection in single-ended switched capacitor networks where high precision is inevitable. The key advantage of this architecture in switched capacitor network is that without any additional circuitry, the switch non-idealities like charge injection and clock feedthrough can be improved significantly. The design is done in 0.18µm TSMC process. The results shows that the proposed switching scheme is 50% more accurate compared to all other conventional techniques in handling charge injection modeling inaccuracies in CMOS switches.","PeriodicalId":178751,"journal":{"name":"2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MOS-AK.2019.8902421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a architecture to reduce charge injection in single-ended switched capacitor networks where high precision is inevitable. The key advantage of this architecture in switched capacitor network is that without any additional circuitry, the switch non-idealities like charge injection and clock feedthrough can be improved significantly. The design is done in 0.18µm TSMC process. The results shows that the proposed switching scheme is 50% more accurate compared to all other conventional techniques in handling charge injection modeling inaccuracies in CMOS switches.