High dose response of as-grown SIMOX substrates

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344596

O. Flament, P. Paillet, D. Hervé, O. Musseau, J. Leray, B. Aspar

引用次数: 1

Abstract

The pseudo-MOS transistor (/spl Psi/-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO/sub 2/). Direct comparison with basic MOS transistors reveals the influence of the process.<>

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生长的SIMOX底物的高剂量响应

伪mos晶体管(/spl Psi/-MOSFET)已被提出作为一种廉价和简单的工具来表征生长的SOI晶圆，并预测在这些衬底上制造的技术的辐射硬度性能。本研究的目的是检查该技术在高达100 Mrad(SiO/sub 2/)剂量下调查SIMOX反应的能力。与基本MOS晶体管的直接比较揭示了工艺的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1993 IEEE International SOI Conference

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