Radiation Hardness Testing of Super-Junction Power Mosfets by Heavy Ion Induced SEE Mapping

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452587

M. Gerold, A. Bergmaier, C. Greubel, J. Reindl, G. Dollinger, M. Rüb

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Abstract

In this work direct heavy ion mapping of Single Event Effect (SEE) and Single Event Burnout (SEB) of super-junction power MOSFETs utilizing a high energy (55MeV) carbon micro-beam is presented. The resulting maps are sub-structurally resolved. Effect location, signal level and possible connections to cosmic radiation events are discussed.

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用重离子诱导SEE映射法测试超结功率mosfet的辐射硬度

本文介绍了利用高能(55MeV)碳微束对超结功率mosfet进行单事件效应(SEE)和单事件燃尽(SEB)的直接重离子映射。生成的映射是子结构解析的。讨论了效应的位置、信号水平以及与宇宙辐射事件的可能联系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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