Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

Abstract

This work presents a novel field for solid state power devices: a 4H-SiC specific device is examined as a current limiting device for serial protection application. The device structure is a vertical power MOSFET like with a existing N channel. Its performances is simulated with ISE TCAD tools. A study of its electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regard to this field.