High temperature stability of p+-Si/p-diamond heterojunction diodes

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598364

Yota Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, Jianbo Liang, N. Shigekawa

引用次数: 1

Abstract

The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.

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p+-Si/p-金刚石异质结二极管的高温稳定性

研究了表面活化键合制备的p+-Si/p-金刚石异质结二极管(hd)的高温电稳定性，并与Al/金刚石肖特基势垒二极管(sdd)进行了比较。我们认为p+-Si/p-金刚石hdd在退火时比金刚石sdd更稳定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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