A planar, nearly ideal, SiC device edge termination

Abstract

In this paper, a simple edge termination is described which can be used to achieve nearly ideal parallel plane breakdown voltage in silicon carbide devices. This novel termination, involves implantation of a neutral species on the edges of devices to form a high resistivity amorphous layer. With this termination, formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to the ideal parallel plane breakdown voltage.